RETRACTED: A light-emitting field-effect transistor (Retracted Article. See vol 298, pg 961, 2002)

被引：118

作者：

Schön, JH ^{[1
]}

Dodabalapur, A ^{[1
]}

Kloc, C ^{[1
]}

Batlogg, B ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

SCIENCE | 2000年 / 290卷 / 5493期

关键词：

D O I：

10.1126/science.290.5493.963

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report here on the structure and operating characteristics of an ambipolar Light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha -sexithiophene, Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, Leading to radiative recombination. Moreover, above a remarkably Low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.

引用

页码：963 / 965

页数：3

共 18 条

[1]

Berggren M, 1997, NATURE, V389, P466

[2] SPECTRAL NARROWING IN HIGH-GAIN LASERS [J].