Improvement in electrical properties at an n-GaAs/n-GaAs regrown interface using ammonium sulfide treatment

被引:8
作者
Furuhata, N [1 ]
Shiraishi, Y [1 ]
机构
[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 305, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期
关键词
GaAs; (NH4)(2)S-x-treatment; MBE; regrown interlace; transmission line model; contact resistance;
D O I
10.1143/JJAP.37.10
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical properties in an n-GaAs/n-GaAs interface regrown by molecular beam epitaxy (MBE) were remarkably improved using ammonium sulfide [(NH4)(2)S-x] treatment prior to regrowth. Reflection high-energy electron diffraction observations indicate that GaAs native oxide is removed by this treatment at a 500 degrees C substrate temperature. This is 100 degrees C lower than the temperature for removal of a native oxide by conventional thermal annealing in MBE. Transmission line model measurement shows that contact resistance at the (NH4)(2)S-x-treated interface is 1.8 x 10(-6) Omega cm(2), while it is 6.0 x 10(-5) Omega cm(2) without this treatment. Capacitance-voltage measurement and secondary-ion mass spectroscopy shaw that this reduction, in contact resistance at the regrown interface, is due to sulfur atoms in the interface behaving as donors (at a carrier concentration of 2 x 10(18) cm(-3)); therefore, they compensate impurities such as carbon or oxygen in the interface. These results reveal that (NH4)(2)S-x-treatment before regrowth is useful for improving device performances; that is, reducing source resistance for field-effect transistors fabricated by n(+)-GaAs selective growth.
引用
收藏
页码:10 / 14
页数:5
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