Electrical properties of bulk ZnO

被引:814
作者
Look, DC [1 ]
Reynolds, DC
Sizelove, JR
Jones, RL
Litton, CW
Cantwell, G
Harsch, WC
机构
[1] Wright State Univ, Res Ctr, Dayton, OH 45435 USA
[2] USAF, Wright Lab, Avion Directorate, AADP, Wright Patterson AFB, OH 45433 USA
[3] Eagle Picher Ind Inc, Miami, OK 74354 USA
关键词
semiconductors; crystal growth; point defects; electronic transport; luminescence;
D O I
10.1016/S0038-1098(97)10145-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Large-diameter (2-inch), n-type ZnO boules grown by a new vapor-phase transport method were investigated by the temperature-dependent Hall-effect technique. The 300-K Hall carrier concentration and mobility were about 6 x 10(16) cm(-3) and 205 cm(2) V-1 s(-1) respectively, and the peak mobility (at 50K) was about 2000 cm(2) V-1 s(-1), comparable to the highest values reported in the East for ZnO. The dominant donor had a concentration of about 1 x 10(17) cm(-3) and an energy of about 60 meV, close to the expected hydrogenic value, whereas the total acceptor concentration was much lower, about 2 x 10(15) cm(-3). Photoluminescence measurements confirm the high quality of the material. (C) 1998 Elsevier Science Ltd.
引用
收藏
页码:399 / 401
页数:3
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