Spin qubits: spin relaxation in coupled quantum dots

被引:10
作者
Stavrou, V. N. [1 ]
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
关键词
quantum dots; spin-flip time; qubits; external magnetic field; lattice temperature; ELECTRONIC-STRUCTURE;
D O I
10.1088/1361-648X/aae509
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The spin-flip scattering mechanism in coupled self-assembled quantum dots made with InAs/GaAs with the use of realistic material parameters is theoretically and numerically investigated. The electron wave functions within the coupled system have been calculated by the 8-band strain dependent k.p theory. The phonon coupling to electrons is described by deformation potential and piezoelectric acoustic phonons. First order perturbation theory has been employed to evaluate the spin relaxation rates and spin-flip time T1. The numerical results show that parameters like the interdot distance and the applied static magnetic field are of crucial importance in spin-flip mechanism. The spin relaxation time has been also studied by varying the lattice temperature and by showing the differences between the quantum computing operation temperature (T similar to 1K) and large temperatures.
引用
收藏
页数:4
相关论文
共 33 条
[11]   Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots [J].
Khaetskii, AV ;
Nazarov, YV .
PHYSICAL REVIEW B, 2001, 64 (12)
[12]   Optically programmable electron spin memory using semiconductor quantum dots [J].
Kroutvar, M ;
Ducommun, Y ;
Heiss, D ;
Bichler, M ;
Schuh, D ;
Abstreiter, G ;
Finley, JJ .
NATURE, 2004, 432 (7013) :81-84
[13]   Electric-field-controlled electron relaxation in lateral double quantum dots embedded in a suspended slab [J].
Liao, Y. Y. ;
Chuu, D. S. ;
Jian, S. R. .
JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)
[14]  
Mahan G., 1972, PROC 1971 ANTWERP AD, P553
[15]  
Mahan G D, 1990, Many-Particle Physics
[16]   Electronic structure of strained InP/Ga0.51In0.49P quantum dots [J].
Pryor, C ;
Pistol, ME ;
Samuelson, L .
PHYSICAL REVIEW B, 1997, 56 (16) :10404-10411
[17]   Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations [J].
Pryor, C .
PHYSICAL REVIEW B, 1998, 57 (12) :7190-7195
[18]  
Ridley B.K., 1982, QUANTUM PROCESSES SE
[19]  
Ridley B K, 1996, ELECT PHONONS SEMICO
[20]   Binary and ternary capped In(Ga)As/GaAs self-assembled quantum dots: An annealing study [J].
Saha, Sumit ;
Hussain, Saddam ;
Kumar, Jitendra .
SUPERLATTICES AND MICROSTRUCTURES, 2018, 117 :241-251