Radiation-induced base current broadening mechanisms in gated bipolar devices

被引：21
作者：
Chen, XJ [1 ]
Barnaby, HJ
Pease, RL
Schrimpf, RD
Platteter, DG
Dunham, G
机构：
[1] Univ Arizona, Tucson, AZ 85721 USA
[2] RLP Res, Los Lunas, NM 87031 USA
[3] Vanderbilt Univ, Nashville, TN 37232 USA
[4] NAVSEA Crane, Crane, IN 47522 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
bipolar; energy distribution; gated devices; interface traps; ionization; radiation;
D O I：
10.1109/TNS.2004.839198
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ionizing radiation experiments on gated lateral bipolar junction transistors (BJTs) show a broadening in the peak base current profile after irradiation. The primary mechanism for this effect is identified as the change in the charge state of interface traps in the oxide over the base. Simulations and theoretical analysis not only describe the mechanism in detail, but also suggest possible solutions for extracting information from the shape of the profile. The effects of the interface-trap energy distribution are investigated, showing that traps between flatband and threshold contribute to the width of the base-current peak.
引用
收藏
页码：3178 / 3185
页数：8
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