Analysis of the thermal degradation mechanism of semiconductor structures under intense microwave radiation

被引：0
|
作者：
Dobykin, VD
机构：
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2000年 / 45卷 / 11期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An exact analytical solution to the linear heat equation with mixed boundary conditions is derived that makes it possible to estimate the critical levels of degradation of semiconductor structures with p-n junctions on the basis of the parameters of these structures.
引用
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页码：1256 / 1259
页数：4
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