Study of Optical, Electrochemical, and Morphological Properties of MoS2 Thin Films Prepared by Thermal Evaporation

In the present study, molybdenum disulfide (MoS2) thin films were synthesized by the physical vapor deposition (PVD) method thermal evaporation on quartz substrates. We have synthesized the films on substrates, at room temperature. Some of the films were annealed at 1000 degrees C at atmospheric pressure before analyzing. The optical properties of MoS2 films are investigated using UV-Vis spectroscopy as well as photoluminescence (PL) analysis. Relatively high transparency of the films is observed from the recorded UV-visible transmission spectrum. From these spectra, the bandgap of the prepared few-layered MoS2 is estimated at 1.78 eV. PL spectra of MoS2 emissions are also discussed. We have used Raman scattering analysis to study the effect of annealing on the vibrational modes of layered MoS2. By annealing the prepared films, we have detected some remarkable shifts in the main Raman peaks. Atomic force microscopy (AFM) analysis is performed to investigate the surface morphology of the MoS2 films. We have also reported and discussed the electrochemical properties of the MoS2 layers. The resistance charge transfer for molybdenum disulfide is calculated to be 277 Omega .