High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation

被引：123

作者：

Dosunmu, OI ^{[1
]}

Cannon, DD

Emsley, MK

Kimerling, LC

Ünlü, MS

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] Analog Dev, Wilmington, MA 01887 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 01期

关键词：

Germanium (Ge); photodetectors; resonant cavity enhanced (RCE); silicon-on-insulator (SOI);

D O I：

10.1109/LPT.2004.836917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have designed and fabricated high-speed resonant cavity enhanced germanium (Ge) Schottky photodetectors on a silicon-on-insulator substrate. These back-illuminated detectors have demonstrated 3-dB bandwidths of more than 12 GHz at 3-V reverse bias and a peak quantum efficiency of 59% (R = 0.73 A/W) at the resonant wavelength of similar to1540 nm. Time domain measurements of our Ge photodetectors with diameters of up to 48 mum show transit-time limited impulse responses corresponding to bandwidths of at least 6.7 GHz, making these detectors compatible with 10-Gb/s data communication systems.

引用

页码：175 / 177

页数：3