Reverse-loop impedance profile in Bi2S3 quantum dots

被引：8

作者：

Abuthahir, K. A. Z. Syed ^{[1
]}

Jagannathan, R. ^{[1
]}

机构：

[1] CECRI, Luminescence Grp, Karaikkudi 630006, Tamil Nadu, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 121卷 / 1-2期

关键词：

Nano-structures; Optical properties; Electrochemical properties; Chalcogenides; Semiconductors; CRYSTALLIZATION; NANOSTRUCTURES;

D O I：

10.1016/j.matchemphys.2010.01.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth sulfide quantum dots (phi similar to 12 nm) with two-dimensional platelet morphology synthesized using a simple aqueous colloidal method exhibit directional growth along (2 1 1) direction. Impedance characteristics of this two-dimensional quantum structure yields a characteristic semi-circular profile due to a classical Voigt element in addition to a semi-circle like loop in the negative imaginary part of the impedance Nyquist plot. The apparent inductive reverse-loop impedance profile observed, a distinguishing feature of this study can be explained on the basis of an unusual negative resistor-capacitor combination, realized due to relaxation of surface states in this technologically important semiconductor-quantum structure. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：184 / 192

页数：9

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