Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition

被引：17
作者：
Chung, SH [1 ]
Lachab, M
Wang, T
Lacroix, Y
Basak, D
Fareed, Q
Kawakami, Y
Nishino, K
Sakai, S
机构：
[1] Univ Tokushima, Satellite Venture Business Lab, Tokushima 7708506, Japan
[2] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 08期
关键词：
Mg-doped GaN; metalorganic chemical vapor deposition; p-type activation; oxygen effect; electrical characteristics;
D O I：
10.1143/JJAP.39.4749
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of oxygen mixed in nitrogen on p-type activation in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) was investigated. The samples annealed in N-2/O-2 (1%) ambient exhibited the best electrical properties with respect to hole concentration. SIMS data suggested that oxygen reacted with hydrogen present in the Mg-doped GaN samples during the thermal annealing process, thereby enhancing the activation of Mg accepters.
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页码：4749 / 4750
页数：2
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