Dielectric and structural characterization of KNbO3 ferroelectric thin films epitaxially grown by pulsed laser deposition on Nb doped SrTiO3

被引：10

作者：

Fasquelle, D. ^{[2
]}

Rousseau, A. ^{[1
]}

Guilloux-Viry, M. ^{[1
]}

Deputier, S. ^{[1
]}

Perrin, A. ^{[1
]}

Carru, J. C. ^{[2
]}

机构：

[1] Univ Rennes 1, UMR CNRS Sci Chim Rennes 6226, F-35042 Rennes, France

[2] Univ Littoral Cote dOpale, LEMCEL, F-62228 Calais, France

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 12期

关键词：

Potassium niobate; Pulsed laser deposition; Structural properties; Dielectric properties; Ferroelectric transition; X-ray diffraction; PHASE-TRANSITION; CERAMICS; CRYSTALS; BEHAVIOR;

D O I：

10.1016/j.tsf.2010.01.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

KNbO3 thin films were deposited on SrTiO3 substrates by pulsed laser deposition. The X-ray diffraction patterns highlight an epitaxial growth according to the (011) orientation. This epitaxial growth was then confirmed by Electron Channeling Pattern. In agreement with the structural characteristics the dense microstructure consists in regular and ordered grains. Dielectric measurements were performed in the 20 Hz to 1 MHz frequency range on a KNbO3 thin film grown on 2 at.% Nb doped (100)SrTiO3 substrate in a large range of temperature in order to investigate the paraelectric-ferroelectric transition. Measurements at room temperature revealed a dielectric constant of 450 at 10 kHz and a minimum value of the loss tangent of 0.075 at 100 kHz. Dielectric study in the 20-600 degrees C temperature range showed a maximum of permittivity at the Curie temperature T-c = 410 degrees C and evidenced a "progressive" first-order phase transition, different from the classical "diffuse" transition. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3432 / 3438

页数：7

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