Oxygen-assisted platinum etching in supercritical carbon dioxide fluids using hexafluoroacetylacetone

被引：3

作者：

Kondoh, Eiichi ^{[1
]}

Ogihara, Yuta ^{[1
]}

机构：

[1] Univ Yamanashi, Fac Engn, Kofu, Yamanashi 4008511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 07期

基金：

日本学术振兴会;

关键词：

THIN-FILM; CO2; COPPER; DEPOSITION; CU; TEMPERATURE; MEMORIES; KINETICS; REMOVAL;

D O I：

10.7567/JJAP.57.07ME01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of volatile products is essential in dry etching reactions. Pt compounds have a low vapor pressure and thus Pt is hardly removed by dry etching. In the present work, Pt thin films were etched in supercritical CO2 fluids, Hexafluoroacetlyacetone (Hhfac), a fluorinated compound, was added to a supercritical CO2 fluid together with O-2 at elevated temperatures (typically 220 degrees C). Etching was observed only when O-2 was added. The etching amount increased with either reaction temperature, O-2 concentration, or Hhfac concentration. The etching rate at 220 degrees C was approximately 0.1 nm/min. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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