A power efficient, low noise, wideband, integrated CMOS preamplifier for LSO/APD PET systems

被引:0
|
作者
Binkley, DM [1 ]
Puckett, BS [1 ]
Casey, ME [1 ]
Lecomte, R [1 ]
Saoudi, A [1 ]
机构
[1] Concorde Microsyst Inc, Knoxville, TN 37932 USA
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A power-efficient, low-noise, wideband, 0.8-mu CMOS charge-sensitive preamplifier has been designed and optimized for LSO/APD based PET systems. Low-noise, wideband performance is needed to achieve l-ns FWHM timing resolution available from LSO/APD detectors, and power efficiency is needed since thousands of preamplifiers are required in a LSO/APD based PET tomograph. A methodology for optimizing wideband timing performance is presented to minimize dominant, frequency-turn-up, input noise current associated with input noise voltage and total capacitance at the input. The methodology suggests the use of a nMOS input device operating in moderate inversion for high transconductance and low input white-noise voltage consistent with moderate input capacitance. Measured preamplifier input-referred, white-noise voltage is 0.65 nV/root Hz and risetime is 6 ns (58 MHz 3-dB bandwidth. Measured timing resolution is 1.17 ns FWHM and energy resolution is 18% FWHM for 511-keV gamma rays detected by a 4 x 4 x 10 mm LSO crystal coupled to an APD. Measurements include the APD capacitance of 30-pF and are obtained at a preamplifier input-device current of only 2 mA.
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页码:362 / 369
页数:2
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