A 40 nm CMOS V-band VCO with On-chip Body Bias Voltage Control Technique

被引：0

作者：

Zhou, Qian ^{[1
]}

Zhang, Shifeng ^{[1
]}

Jie, Lu ^{[1
]}

Feng, Guangtao ^{[2
]}

Han, Yan ^{[3
]}

Han, Xiaoxia ^{[1
]}

Ray, C. C. Cheung ^{[4
]}

机构：

[1] Zhejiang Univ, Inst Microelect & Photoelect, Hangzhou, Zhejiang, Peoples R China

[2] Semicond Mfg Int Corp, Shanghai, Peoples R China

[3] Zhejiang Univ, Inst Microelect & Photo Elect, Hangzhou, Zhejiang, Peoples R China

[4] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

2016 2ND INTERNATIONAL CONFERENCE ON COMMUNICATION CONTROL AND INTELLIGENT SYSTEMS (CCIS) | 2016年

基金：

中国国家自然科学基金;

关键词：

V-band VCO; Low Phase Noise; Body Bias Voltage Control; TECHNOLOGY; DESIGN;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a 40 nm CMOS V-band voltage-controlled oscillator (VCO). With using on-chip body bias voltage control technique, the phase noise and stability of the output signal are improved. The design was fabricated by RF Mixed-signal CMOS process with die size 0.078 mm(2). Based on the silicon results, the proposed V-band VCO can achieve the phase noise of-86 dBc/Hz at 1 MHz offset. The VCO draws 17.8 mA current from a 1.2 V supply. Compared with the traditional structure VCO of the same batch, the measured FOM is optimized from-165.4 dB to-169 dB, meanwhile the output signal power offset is reduced by 1.8 dBm.

引用

页码：177 / 180

页数：4

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