Ab-initio calculations of the optical band gap of TiO2 thin films

被引:35
|
作者
Wunderlich, Wilfried [1 ]
Miao, Lei [1 ]
Tanemura, Masaki [1 ]
Tanemura, Sakae [1 ]
Jin, Ping [1 ]
Kaneko, Kenji [1 ]
Terai, Asuka [1 ]
Nabatova-Gabin, Nataliya [1 ]
Belkada, Rachid [1 ]
机构
[1] Nagoya Inst Technol, Dept Environm Engn, Nagoya, Aichi 4668555, Japan
关键词
epitaxial growth; anatase; rutile; density of states;
D O I
10.1142/S0219581X04002231
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Titanium dioxide has been extensively studied in recent decades for its important photocatalytic application in environmental purification. The search for a method to narrow the optical band gap of TiO2 plays a key role for enhancing its photocatalytic application. The optical band gap of epitaxial rutile and anatase TiO2 thin films deposited by helicon magnetron sputtering on sapphire and on SrTiO3 substrates was correlated to the lattice constants. The optical band gap of 3.03 eV for bulk-rutile increased for the thin films to 3.37 on sapphire. The band gap of 3.20 eV for bulk-anatase increases to 3.51 on SrTiO3. In order to interpret this expansion, ab-initio calculations were performed using the Vienna ab-initio software. The calculations for rutile as well anatase show an almost linear increase of the band gap width with decreasing volume or increasing lattice constant a. The calculated band gap fits well with the experimental values. The conclusion from these calculations is, in order to achieve a smaller band gap for both, rutile or anatase, the lattice constant c has to be compressed, and a has to be expanded.
引用
收藏
页码:439 / 445
页数:7
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