Bond-quality characterization of silicon-glass anodic bonding

被引：9

作者：

TaticLucic, S ^{[1
]}

Ames, J ^{[1
]}

Boardman, B ^{[1
]}

McIntyre, D ^{[1
]}

Jaramillo, P ^{[1
]}

Starr, L ^{[1
]}

Lim, MH ^{[1
]}

机构：

[1] UNIV COLORADO,DEPT ELECT & COMP ENGN,COLORADO SPRINGS,CO 80918

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 60卷 / 1-3期

关键词：

anodic bonding; bond quality; glass; silicon;

D O I：

10.1016/S0924-4247(97)01381-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple testing method is presented that allows the comparison of the bond quality for anodically bonded wafers, An array of parallel metal lines of predetermined thickness is formed on a glass wafer. The estimation of the bond quality can be performed by visual inspection after the bonding. This method enables comparison of the anodic-bonding process performance for different glasses, for intermediate layers and various bonding conditions. The optimization of silicon-glass anodic bonding with an intermediate phosphosilicate glass (PSG) layer is shown using this technique.

引用

页码：223 / 227

页数：5

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