The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET

被引：20

作者：

Chou, JC ^{[1
]}

Hsiao, CN ^{[1
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu, Yunlin, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 66卷 / 1-3期

关键词：

pH-ISFETs; hysteresis; drift; a-Si : H;

D O I：

10.1016/S0925-4005(00)00341-5

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

According to the experimental results, the output behavior of the device consists of four parts: fast response, slow response, drift and hysteresis. The hysteresis and drift limit the accuracy obtained from pH-sensitive surface in ion-sensitive field-effect transistors (pH-ISFETs). In this paper, we have studied that hysteresis affects of hydrogenated amorphous silicon (a-Si:H)-gate ISFETs by exposing the device to two cycles of pH values and compared the hysteresis amounts. In addition, we have measured the drift effect of a-Si:H at the different pH values and understand the influence of pH values for the drift effects of a-Si:H-gate ISFETs. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：181 / 183

页数：3

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