High average power passively Q-switched laser diode side-pumped green laser by using Nd:YAG/Cr4+:YAG/YAG composite crystal

被引：11
作者：
Zhu, Siqi [1 ,2 ]
He, Qing [1 ,3 ]
Wang, Sue [1 ,2 ]
Chen, Zhenqiang [1 ,2 ]
Li, Anming [1 ,2 ]
Yin, Hao [1 ]
Li, Zhen [1 ]
机构：
[1] Jinan Univ, Inst Optoelect Engn, Guangzhou 510632, Guangdong, Peoples R China
[2] Guangdong Higher Educ Inst, Key Lab Optoelect Informat & Sensing Technol, Guangzhou 510632, Guangdong, Peoples R China
[3] Guangdong Med Coll, Dongguan 523000, Guangdong, Peoples R China
来源：
JOURNAL OF LASER APPLICATIONS | 2014年 / 26卷 / 03期
关键词：
passively Q-switched; composite crystal; green laser; side-pumped system; SEMICONDUCTOR SATURABLE ABSORBER;
D O I：
10.2351/1.4870435
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a high average power passively Q-switched, laser diode side-pumped green laser at 532 nm was reported by using Nd:YAG/Cr4+:YAG/YAG composite crystal for the first time. The performances of the average power, pulse width, and pulse repetition rate on pump power were measured. Under the pump power of 187.5 W, the Q-switched green laser was obtained with the average power of 27.2 W, pulse width of 210 ns, and the repetition rate of 21.2 kHz. The single-pulse energy was 1.28 mJ and peak power was higher than 6.1 kW. (C) 2014 Laser Institute of America.
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页数：6
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