Bulk transport measurements in ZnO: The effect of surface electron layers

被引：104
作者：
Allen, M. W. [1 ]
Swartz, C. H. [1 ]
Myers, T. H. [2 ,3 ]
Veal, T. D. [4 ]
McConville, C. F. [4 ]
Durbin, S. M. [1 ]
机构：
[1] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand
[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA
[3] Texas State Univ San Marcos, Mat Sci & Engn Program, San Marcos, TX 78666 USA
[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
N-TYPE; GROWTH;
D O I：
10.1103/PhysRevB.81.075211
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Magnetotransport measurements and x-ray photoemission spectroscopy were used to investigate the surface conductivity of ZnO. Near-surface downward band bending, consistent with electron accumulation, was found on the polar and nonpolar faces of bulk ZnO single crystals. A significant polarity effect was observed in that the downward band bending was consistently stronger on the Zn-polar face and weaker on the O-polar face. The surface electron accumulation layer was found to significantly influence the electrical properties of high resistivity, hydrothermally grown bulk ZnO crystals at temperatures below 200 K, and is largely responsible for the anomalously low electron mobility reported for this material.
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页数：6
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共 34 条
  • [1] Silver oxide Schottky contacts on n-type ZnO
    Allen, M. W.
    Durbin, S. M.
    Metson, J. B.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (05)
  • [2] Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes
    Allen, Martin W.
    Weng, Xiaojun
    Redwing, Joan M.
    Sarpatwari, Karthik
    Mohney, Suzanne E.
    von Wenckstern, Holger
    Grundmann, Marius
    Durbin, Steven M.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (09) : 2160 - 2164
  • [3] Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy
    Antoszewski, J
    Faraone, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 3881 - 3892
  • [4] DETERMINATION OF ELECTRICAL TRANSPORT-PROPERTIES USING A NOVEL MAGNETIC FIELD-DEPENDENT HALL TECHNIQUE
    BECK, WA
    ANDERSON, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 541 - 544
  • [5] Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
    Brillson, L. J.
    Dong, Y.
    Doutt, D.
    Look, D. C.
    Fang, Z. -Q.
    [J]. PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4768 - 4773
  • [6] Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001)
    Chambers, SA
    Droubay, T
    Kaspar, TC
    Gutowski, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 2205 - 2215
  • [7] In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces
    Coppa, BJ
    Fulton, CC
    Hartlieb, PJ
    Davis, RF
    Rodriguez, BJ
    Shields, BJ
    Nemanich, RJ
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) : 5856 - 5864
  • [8] POLAR SURFACES OF ZINC OXIDE CRYSTALS
    HEILAND, G
    KUNSTMANN, P
    [J]. SURFACE SCIENCE, 1969, 13 (01) : 72 - +
  • [9] HENRICH VE, 1994, SURFACE SCI METAL OX, P297
  • [10] Fine tuning of the face orientation of ZnO crystals to optimize their photocatalytic activity
    Jang, Eue Soon
    Won, Jung-Hee
    Hwang, Seong-Ju
    Choy, Jin-Ho
    [J]. ADVANCED MATERIALS, 2006, 18 (24) : 3309 - +
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