Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

被引：270

作者：

Fortunato, Elvira ^{[1
]}

Barros, Raquel ^{[1
,2
]}

Barquinha, Pedro ^{[1
]}

Figueiredo, Vitor ^{[1
]}

Park, Sang-Hee Ko ^{[3
]}

Hwang, Chi-Sun ^{[3
]}

Martins, Rodrigo ^{[1
]}

机构：

[1] Univ Nova Lisboa, Dept Ciencia Mat, CENIMAT I3N, Fac Ciencias & Tecnol,CEMOP UNINOVA, P-2829516 Caparica, Portugal

[2] SA, INNOVNANO, Mat Avancados, P-7600095 Aljustrel, Portugal

[3] Elect & Telecommun Res Inst, Taejon 305700, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

基金：

欧洲研究理事会;

关键词：

TIN OXIDE-FILMS; ROOM-TEMPERATURE; OXIDATION; TFTS;

D O I：

10.1063/1.3469939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x < 2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal beta-Sn and alpha-SnOx phases, after annealing at 200 degrees C. These films exhibit a hole carrier concentration in the range of approximate to 10(16)-10(18) cm(-3); electrical resistivity between 10(1)-10(2) Omega cm; Hall mobility around 4.8 cm(2)/V s; optical band gap of 2.8 eV; and average transmittance approximate to 85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm(2)/V s and an ON/OFF modulation ratio of 10(3). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3469939]

引用

页数：3