Analog-to-digital converter based on single-electron tunneling transistors

被引:10
|
作者
Hu, CH [1 ]
Cotofana, SD
Jiang, JF
Cai, QY
机构
[1] Shanghai Jiao Tong Univ, Res Inst Micro & Nanometer Sci & Technol, Shanghai 200030, Peoples R China
[2] Delft Univ Technol, Comp Engn Lab, NL-2628 AA Delft, Netherlands
关键词
analog-to-digital conversion (ADC); circuit modeling; semiclassical method; single-electron tunneling;
D O I
10.1109/TVLSI.2004.836313
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A novel single-electron tunneling transistors (SETTs) based analog-to-digital converter (ADC) is proposed in this paper. The scheme we propose fully utilizes Coulomb oscillation effect, can properly operate at T > 0 K, and only a capacitive divider (built with 2n - 2 capacitors) and n pairs of complementary SETTs are required for an n-bit ADC implementation. When compared with other state-of-the-art SET based ADCs our method provides the most compact solution measured in terms of circuit elements and has a potential advantage in terms of conversion speed. To illustrate the operation of the proposed scheme, a 4-bit ADC is demonstrated at 10K by means of simulation.
引用
收藏
页码:1209 / 1213
页数:5
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