Independently driven DG MOSFETs for mixed-signal circuits: Part II - Applications on cross-coupled feedback and harmonics generation

被引：10

作者：

Gen, P ^{[1
]}

Kan, ECC ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 12期

基金：

美国国家科学基金会;

关键词：

differential amplifier; double-gate (DG) MOSFET; harmonic generation; high-frequency circuit; mixer;

D O I：

10.1109/TED.2004.838337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Circuit applications utilizing the tight quasi-static and nonquasi-static channel coupling in independently driven double-gate (IDDG) MOSFETs are presented. The performances of cross-coupled differential amplifiers and mixers with IDDG are compared with those of the SDDG counterparts. The quasi-static coupling in IDDG increases output voltage swing and improves voltage waveform symmetry in the cross-coupled differential amplifier. The nonquasi-static coupling in IDDG provides fast feedback in the differential amplifiers, and allows higher frequencies in the input signals for harmonic generation in mixers. We have identified plausible advantages in IDDG that cannot be readily implemented by SDDG, which justifies the fabrication cost and parasitic capacitance penalty of IDDG.

引用

页码：2094 / 2101

页数：8

共 25 条

[1]

Allen PhillipE., 2002, CMOS ANALOG CIRCUIT, V2nd

[2] A PRECISION VARIABLE-SUPPLY CMOS COMPARATOR [J].

ALLSTOT, DJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (06) :1080-1087

[3]

[Anonymous], IEDM DEC

[4] Back-gated MOSFETs with controlled silicon thickness for adaptive threshold-voltage control [J].

Avci, U ;

Tiwari, S .

ELECTRONICS LETTERS, 2004, 40 (01) :74-75

[5]

Cakici T, 2003, 2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P21

[6]

Chen CA, 1996, ONLINE J KNOWL SYN N, V3, P1

[7] Back-gate forward bias method for low-voltage CMOS digital circuits [J].

Chen, MJ ;

Ho, JS ;

Huang, TH ;

Yang, CH ;

Jou, YN ;

Wu, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (06) :904-910

[8]

CHENG Y, 2002, P 4 IEEE INT CAR C D, P8

[9]

DUTTON RW, 1996, IEEE ISCC, P78

[10] Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI) [J].

Hamel, JS ;

Stefanou, S ;

Bain, M ;

Armstrong, BM ;

Gamble, HS .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (04) :134-135

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