Comparative study of AZO and ITO thin film sputtered at different temperatures and their application in Cu2ZnSnS4 solar cells

被引：20

作者：

Lu, Yilei ^{[1
]}

Wang, Shurong ^{[1
,2
]}

Yang, Min ^{[1
]}

Xu, Xin ^{[1
]}

Li, Qi ^{[1
]}

机构：

[1] Yunnan Normal Univ, Key Lab Rural Energy Engn Yunnan Prov, Juxian St 768, Kunming 650500, Yunnan, Peoples R China

[2] Yunnan Normal Univ, Yunnan Key Lab Optoelect Informat Technol, Kunming 650500, Yunnan, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2018年 / 29卷 / 20期

基金：

中国国家自然科学基金;

关键词：

CRYSTALLIZATION; IMPACT;

D O I：

10.1007/s10854-018-9853-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium tin oxide (ITO) and Al-doped ZnO (AZO) are the most common materials for transparent conducting films used as a front contact layer on solar cells. In this study, AZO and ITO thin films were deposited by sputtering under different temperatures in order to study the difference between two kinds of thin films in crystal structure, morphology, optical and electrical properties. In the same time, CZTS solar cells were also fabricated using AZO or ITO thin films as the window layers, and the obtained highest efficiencies of 3.66% and 5.12% are based on AZO and ITO window layers with different sputtering temperatures, respectively.

引用

页码：17525 / 17532

页数：8

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