Role of Relaxation on the Giant Permittivity and Electrical Properties of CaCu3Ti4O12 Ceramics

被引:9
作者
Zhao, Xuetong [1 ]
Ren, Lulu [1 ]
Liao, Ruijin [1 ]
Li, Jianying [2 ]
Yang, Lijun [1 ,2 ]
Wang, Feipeng [1 ]
机构
[1] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Se, Shazheng St 174, Chongqing 400044, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, 28 Wianning West Rd, Xian 710049, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Relaxation; grain boundaries; dielectric properties; CaCu3Ti4O12; HIGH-DIELECTRIC-CONSTANT; SPECTROSCOPY; IMPEDANCE; BEHAVIOR;
D O I
10.1007/s11664-016-4336-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CaCu3Ti4O12 (CCTO) ceramics were synthesized under various sintering conditions to investigate the role of relaxation on permittivity and electrical properties. Two relaxation processes that respectively related to grain and to domain boundary at a temperature as low as 223 K were fitted according to the Cole-Cole theory. The results indicate that both relaxations largely account for the giant permittivity of CCTO ceramics. Moreover, the relaxation behaviors of grain and of the grain boundary can be processed via impedance plots that vary from 113 K to 473 K. It is shown that longer sintering duration leads to lower resistance of grain and of grain boundary: e.g., from 3200 Omega to 810 Omega and 1.76 M Omega to 0.48 M Omega, respectively. The activation energy related to grain-boundary relaxation drops from 1.14 eV to 0.80 eV, while the value of grain stays unchanged at about 0.11 eV. The Schottky barrier of the CCTO sample decreases from 0.65 eV to 0.57 eV. It is also proposed that the nonlinearity of current-voltage property for CCTO ceramics may be strongly related to the relaxation processes of grain boundaries.
引用
收藏
页码:3079 / 3086
页数:8
相关论文
共 35 条
[1]   Characterization of grain boundary impedances in fine- and coarse-grained CaCu3Ti4O12 ceramics -: art. no. 094124 [J].
Adams, TB ;
Sinclair, DC ;
West, AR .
PHYSICAL REVIEW B, 2006, 73 (09)
[2]   Correlation between the trap state spectra and dielectric behavior of CaCu3Ti4O12 [J].
Baerner, K. ;
Luo, X. J. ;
Song, X. P. ;
Hang, C. ;
Chen, S. S. ;
Medvedeva, I. V. ;
Yang, C. P. .
JOURNAL OF MATERIALS RESEARCH, 2011, 26 (01) :36-44
[3]  
Barsoukov E, 2005, IMPEDANCE SPECTROSCOPY: THEORY, EXPERIMENT, AND APPLICATIONS, 2ND EDITION, P1, DOI 10.1002/0471716243
[4]   The effect of processing on the giant dielectric properties of CaCu3Ti4O12 [J].
Bender, BA ;
Pan, MJ .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 117 (03) :339-347
[5]  
Chen J. D., 1982, DIELECTRIC PHYS, P178
[6]   High temperature electrical properties of highly epitaxial CaCu3Ti4O12 thin films on (001) LaAlO3 [J].
Chen, L ;
Chen, CL ;
Lin, Y ;
Chen, YB ;
Chen, XH ;
Bontchev, RP ;
Park, CY ;
Jacobson, AJ .
APPLIED PHYSICS LETTERS, 2003, 82 (14) :2317-2319
[7]   Strong nonlinear current-voltage behaviour in perovskite-derivative calcium copper titanate [J].
Chung, SY ;
Kim, ID ;
Kang, SJL .
NATURE MATERIALS, 2004, 3 (11) :774-778
[8]   Evidence of the ultrahigh dielectric constant of CaSiO3-doped CaCu3Ti4O12 from its dielectric response, impedance spectroscopy, and microstructure [J].
Fang, Tsang-Tse ;
Lin, Wei-Jie ;
Lin, Chia-Ying .
PHYSICAL REVIEW B, 2007, 76 (04)
[9]   Evidence of the internal domains for inducing the anomalously high dielectric constant of CaCu3Ti4O12 [J].
Fang, TT ;
Liu, CP .
CHEMISTRY OF MATERIALS, 2005, 17 (20) :5167-5171
[10]   Dielectric properties of CaCu3Ti4O12 based multiphased ceramics [J].
Guillemet-Fritsch, S ;
Lebey, T ;
Boulos, M ;
Durand, B .
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (07) :1245-1257