Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics

被引：80

作者：

Saito, W ^{[1
]}

Kuraguchi, M

Takada, Y

Tsuda, K

Omura, I

Ogura, T

机构：

[1] Toshiba Co Ltd, Semicond Co, Kawasaki, Kanagawa 2128583, Japan

[2] Toshiba Res & Dev Ctr, Kawasaki, Kanagawa 2128583, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 01期

关键词：

GaN; high-voltage device; power semiconductor device;

D O I：

10.1109/TED.2004.841338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High breakdown voltage AlGaN-GaN power high-electron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 mOmega . cm(2) for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.

引用

页码：106 / 111

页数：6

共 18 条

[1] 10-W/mm AlGaN-GaNHFET with a field modulating plate [J].

Ando, Y ;

Okamoto, Y ;

Miyamoto, H ;

Nakayama, T ;

Inoue, T ;

Kuzuhara, M .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :289-291

[2]

ARUKUMARAN S, 2003, IEEE ELECTR DEVICE L, V24, P497

[3] Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (02) :888-894

[4] Trends in power semiconductor devices [J].

Baliga, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) :1717-1731

[5] WIDE BANDGAP COMPOUND SEMICONDUCTORS FOR SUPERIOR HIGH-VOLTAGE UNIPOLAR POWER DEVICES [J].

CHOW, TP ;

TYAGI, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1481-1483

[6] RESURF AlGaN/GaN HEMT for high voltage power switching [J].

Karmalkar, S ;

Deng, JY ;

Shur, MS ;

Gaska, R .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) :373-375

[7] Experimental evaluation of impact ionization coefficients in GaN [J].

Kunihiro, K ;

Kasahara, K ;

Takahashi, Y ;

Ohno, Y .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (12) :608-610

[8]

OTOKI Y, 2003, P GAAS MANTECH C MAY, P331

[9] High breakdown voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application [J].

Saito, W ;

Kuraguchi, M ;

Takada, Y ;

Tsuda, K ;

Omura, I ;

Ogura, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (11) :1913-1917

[10] Design and demonstration of high breakdown voltage GaN high electron mobility transistor (HEMT) using field plate structure for power electronics applications [J].

Saito, W ;

Takada, Y ;

Kuraguchi, M ;

Tsuda, K ;

Omura, I ;

Ogura, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B) :2239-2242

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