Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy

被引：40

作者：

Chiba, D. ^{[1
,2
]}

Nakatani, Y. ^{[3
]}

Matsukura, F. ^{[2
]}

Ohno, H. ^{[2
]}

机构：

[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Univ Electrocommun, Tokyo 1828585, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

关键词：

ferromagnetic materials; free energy; gallium arsenide; III-V semiconductors; magnetic anisotropy; magnetic semiconductors; magnetic switching; manganese compounds; FERROMAGNETIC SEMICONDUCTOR; MEMORY DEVICE;

D O I：

10.1063/1.3428959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical anisotropy modulation was recently observed in ferromagnetic semiconductors and metals. The authors have investigated magnetization switching through magnetic anisotropy modulation induced by external electric field by means of simulation. Macrospin simulation using Landau-Lifshitz-Gilbert equation shows that switching is possible by controlling magnetic anisotropy for appropriate sets of parameters. The condition for quasistatic magnetization switching is also presented, in which magnetization direction is determined to minimize the magnetic free energy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428959]

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页数：3

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