Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

被引：0
|
作者：
Arita, Yutaka
Niita, Koji
Kihara, Yuji
Mitsuhasi, Junich
Takai, Mikio
Ogawa, Izumi
Kishimoto, Tadafumi
Yoshihara, Tsutomu
机构：
[1] Renesas Technol Corp, Itami, Hyogo 6640005, Japan
[2] Res Org Informat Sci & Technol, Ibaraki 3191106, Japan
[3] Osaka Univ, Ctr Quantum Sci & Technol Under Extreme Condit, Osaka 5608531, Japan
[4] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
[5] Osaka Univ, Dept Phys, Osaka 5608531, Japan
[6] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka 8080135, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 6A期
关键词：
PHITS; single-event upset; thermal neutron; simulation; SRAM;
D O I：
10.1143/JJAP.46.3377
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-mu m-design-rule 4 Mbit static 14 random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.
引用
收藏
页码：3377 / 3379
页数：3
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