Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

被引：0

作者：

Arita, Yutaka

Niita, Koji

Kihara, Yuji

Mitsuhasi, Junich

Takai, Mikio

Ogawa, Izumi

Kishimoto, Tadafumi

Yoshihara, Tsutomu

机构：

[1] Renesas Technol Corp, Itami, Hyogo 6640005, Japan

[2] Res Org Informat Sci & Technol, Ibaraki 3191106, Japan

[3] Osaka Univ, Ctr Quantum Sci & Technol Under Extreme Condit, Osaka 5608531, Japan

[4] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[5] Osaka Univ, Dept Phys, Osaka 5608531, Japan

[6] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka 8080135, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 6A期

关键词：

PHITS; single-event upset; thermal neutron; simulation; SRAM;

D O I：

10.1143/JJAP.46.3377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-mu m-design-rule 4 Mbit static 14 random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

引用

页码：3377 / 3379

页数：3