Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

被引：0

作者：

Arita, Yutaka

Niita, Koji

Kihara, Yuji

Mitsuhasi, Junich

Takai, Mikio

Ogawa, Izumi

Kishimoto, Tadafumi

Yoshihara, Tsutomu

机构：

[1] Renesas Technol Corp, Itami, Hyogo 6640005, Japan

[2] Res Org Informat Sci & Technol, Ibaraki 3191106, Japan

[3] Osaka Univ, Ctr Quantum Sci & Technol Under Extreme Condit, Osaka 5608531, Japan

[4] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[5] Osaka Univ, Dept Phys, Osaka 5608531, Japan

[6] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka 8080135, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 6A期

关键词：

PHITS; single-event upset; thermal neutron; simulation; SRAM;

D O I：

10.1143/JJAP.46.3377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-mu m-design-rule 4 Mbit static 14 random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

引用

页码：3377 / 3379

页数：3

共 47 条

[1] Estimating the Single-Event Upset sensitivity of a memory array using simulation
Raine, Melanie
Gaillardin, Marc
Lagutere, Thierry
Duhamel, Olivier
Paillet, Philippe
MICROELECTRONICS RELIABILITY, 2017, 78 : 349 - 354
[2] A Single-Event Upset Evaluation Approach Using Ion-Induced Sensitive Area
Song, Ruiqiang
Shao, Jinjin
Liang, Bin
Chi, Yaqing
Chen, Jianjun
2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2019,
[3] Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections
Gaspard, N. J.
Jagannathan, S.
Diggins, Z. J.
King, M. P.
Wen, S-J.
Wong, R.
Loveless, T. D.
Lilja, K.
Bounasser, M.
Reece, T.
Witulski, A. F.
Holman, W. T.
Bhuva, B. L.
Massengill, L. W.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4368 - 4373
[4] Studies on single-event phenomena using the heavy-ion microbeam at JAERI
Hirao, T
Mori, H
Laird, JS
Onoda, S
Wakasa, T
Abe, H
Itoh, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 210 : 227 - 231
[5] Comparison of single-event upset generated by heavy ion and pulsed laser
Bin Liang
Ruiqiang Song
Jianwei Han
Yaqing Chi
Rui Chen
Chunmei Hu
Jianjun Chen
Yingqi Ma
Shipeng Shangguan
Science China Information Sciences, 2017, 60
[6] Comparison of single-event upset generated by heavy ion and pulsed laser
Bin LIANG
Ruiqiang SONG
Jianwei HAN
Yaqing CHI
Rui CHEN
Chunmei HU
Jianjun CHEN
Yingqi MA
Shipeng SHANGGUAN
Science China(Information Sciences), 2017, 60 (07) : 243 - 251
[7] Comparison of single-event upset generated by heavy ion and pulsed laser
Liang, Bin
Song, Ruiqiang
Han, Jianwei
Chi, Yaqing
Chen, Rui
Hu, Chunmei
Chen, Jianjun
Ma, Yingqi
Shangguan, Shipeng
SCIENCE CHINA-INFORMATION SCIENCES, 2017, 60 (07)
[8] Evaluation of fast neutron induced single event upset in a static random access memory and simulation by Monte Carlo N-Particle Code (MCNPX)
Arita, Y
Takai, M
Ogawa, I
Kishimoto, T
Nagai, Y
Hatanaka, K
Matsuoka, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L797 - L799
[9] Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory
Zhang, Hong
Huang, Jing
Guo, Hong Xia
Lei, Zhi Feng
Li, Bo
FERROELECTRICS LETTERS SECTION, 2021, 48 (4-6) : 117 - 127
[10] Event Generator Models in the Particle and Heavy Ion Transport Code System; PHITS
Niita, Koji
Iwamoto, Y.
Sato, T.
Matsuda, N.
Sakamoto, Y.
Nakashima, H.
Iwase, H.
Shiver, L.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (02) : 827 - 832

← 1 2 3 4 5 →