Van der Waals Spin Valves

被引:156
作者
Cardoso, C. [1 ]
Soriano, D. [1 ]
Garcia-Martinez, N. A. [1 ]
Fernandez-Rossier, J. [1 ]
机构
[1] Int Iberian Nanotechnol Lab INL, QuantaLab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal
关键词
MAGNETORESISTANCE; FERROMAGNETISM; EXCHANGE;
D O I
10.1103/PhysRevLett.121.067701
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose spin valves where a 2D nonmagnetic conductor is intercalated between two ferromagnetic insulating layers. In this setup, the relative orientation of the magnetizations of the insulating layers can have a strong impact on the in-plane conductivity of the 2D conductor. We first show this for a graphene bilayer, described with a tight-binding model, placed between two ferromagnetic insulators. In the antiparallel configuration, a band gap opens at the Dirac point, whereas in the parallel configuration, the graphene bilayer remains conducting. We then compute the electronic structure of graphene bilayer placed between two monolayers of the ferromagnetic insulator CrI3, using density functional theory. Consistent with the model, we find that a gap opens at the Dirac point only in the antiparallel configuration.
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页数:5
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