Pressure-induced phase transitions in Si observed by thermoelectric power measurements

被引：18
|
作者：
Ovsyannikov, SV
Shchennikov, VV
Misiuk, A
Shchennikov, VV
机构：
[1] Russian Acad Sci, High Pressure Grp, Inst Med Phys, Urals Div, Ekaterinburg 620219, Russia
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[3] Russian Acad Sci, Urals Div, Inst Engn Sci, Ekaterinburg 620219, Russia
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 132卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
semiconductors; phase transitions; electronic transport; high pressure;
D O I：
10.1016/j.ssc.2004.09.001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
For the first time the phase transitions under high pressure P up to 20 GPa have been observed in Czochralski-grown Si single crystals by thermoelectric power S measurements. Values of S approximate to + 8 +/- 3 muV/K have been determined for tetragonal, orthorhombic and simple hexagonal high-pressure phases. The behaviour of S(P) was found to be rather different for different Si samples-initial and pre-treated by high temperatures 450-650 degreesC under hydrostatic pressure 0-1.5 GPa. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：545 / 549
页数：5
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