Pressure-induced phase transitions in Si observed by thermoelectric power measurements

被引：18

作者：

Ovsyannikov, SV

Shchennikov, VV

Misiuk, A

Shchennikov, VV

机构：

[1] Russian Acad Sci, High Pressure Grp, Inst Med Phys, Urals Div, Ekaterinburg 620219, Russia

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[3] Russian Acad Sci, Urals Div, Inst Engn Sci, Ekaterinburg 620219, Russia

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 132卷 / 08期

基金：

俄罗斯基础研究基金会;

关键词：

semiconductors; phase transitions; electronic transport; high pressure;

D O I：

10.1016/j.ssc.2004.09.001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

For the first time the phase transitions under high pressure P up to 20 GPa have been observed in Czochralski-grown Si single crystals by thermoelectric power S measurements. Values of S approximate to + 8 +/- 3 muV/K have been determined for tetragonal, orthorhombic and simple hexagonal high-pressure phases. The behaviour of S(P) was found to be rather different for different Si samples-initial and pre-treated by high temperatures 450-650 degreesC under hydrostatic pressure 0-1.5 GPa. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：545 / 549

页数：5

共 26 条

[1] Nucleation and formation of oxygen precipitates in Czochralski grown silicon annealed under uniform stress conditions [J].