Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates -: A theoretical approach

被引：127

作者：

Shiraishi, K ^{[1
]}

Yamada, K

Torii, K

Akasaka, Y

Nakajima, K

Konno, M

Chikyow, T

Kitajima, H

Arikado, T

机构：

[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Waseda Univ, Nanotechnol Res Lab, Shinjuku Ku, Tokyo 1690041, Japan

[4] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

[5] Hitachi Sci Syst Ltd, Naka Customer Ctr, Applicat Technol Dept, Hitachi, Ibaraki 3120033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 11A期

关键词：

high-k dielectrics; poly-Si-gate electrode; Fermi level pinning; theory; oxygen vacancy; HfO2; flatband shift; threshold voltage shift;

D O I：

10.1143/JJAP.43.L1413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical investigation has been made of the origin of substantial threshold voltage (V-th) shifts observed in p+poly-Si.gate Hf-based metal insulator semiconductor field effect transistors (MISFETs), by focusing on the effect of oxygen vacancy (V-O) formation in HfO2. It has been found that V-O formation and subsequent electron transfer across the interface definitely causes substantial V-th shifts, especially in p+poly-Si gate MISFETs. Moreover, the theory also systematically reproduces recent experimental reports that large flat band (V-fb) shifts are observed, even in intrinsic poly-Si gates, and that the Vfb Shifts exhibit a high dependence on HfSiOx thickness.

引用

页码：L1413 / L1415

页数：3

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