Superconducting phase domains for memory applications

被引:30
作者
Bakurskiy, S. V. [1 ,2 ,3 ]
Klenov, N. V. [1 ,2 ,3 ]
Soloviev, I. I. [1 ,3 ]
Kupriyanov, M. Yu. [1 ,3 ]
Golubov, A. A. [3 ,4 ,5 ]
机构
[1] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia
[2] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia
[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
[4] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands
[5] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
基金
俄罗斯科学基金会;
关键词
JOSEPHSON CURRENT; FERROMAGNET; FIELD;
D O I
10.1063/1.4940440
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, we study theoretically the properties of S-F/N-sIS type Josephson junctions in the frame of the quasiclassical Usadel formalism. The structure consists of two superconducting electrodes (S), a tunnel barrier (I), a combined normal metal/ferromagnet (N/F) interlayer, and a thin superconducting film (s). We demonstrate the breakdown of a spatial uniformity of the superconducting order in the s-film and its decomposition into domains with a phase shift pi. The effect is sensitive to the thickness of the s layer and the widths of the F and N films in the direction along the sIS interface. We predict the existence of a regime where the structure has two energy minima and can be switched between them by an electric current injected laterally into the structure. The state of the system can be nondestructively read by an electric current flowing across the junction. (C) 2016 AIP Publishing LLC.
引用
收藏
页数:5
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