Output Power Control in Class-E Power Amplifiers

被引：12

作者：

Sira, Daniel ^{[1
]}

Thomsen, Pia ^{[2
]}

Larsen, Torben ^{[1
]}

机构：

[1] Univ Aalborg, Dept Elect Syst, Aalborg, Denmark

[2] Texas Instruments Denmark AS, Aalborg, Denmark

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 04期

关键词：

Cascode; class-E; CMOS power amplifier; dynamic range; power control; CMOS; EDGE;

D O I：

10.1109/LMWC.2010.2042562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique is presented to facilitate power control of cascode class-E power amplifiers (PAs). It is shown that by controlling the signal applied to the gate of the cascode transistor, the transmit power is changed. The main advantage of the proposed technique is a high 36 dB output power control range (PCR) compared to 20 dB for the traditional approach. This fulfills the requirements of the GSM standard on the PCR at all power levels and all frequency bands (for GMSK modulation). The concept of the cascode power control of class-E RF PA operating at 2.2 GHz with 18 dBm output power was implemented in a 0.18 mu m CMOS technology, and the performance has been verified by measurements. The PA has been tested by a single tone, and by a GMSK modulated input signal.

引用

页码：232 / 234

页数：3

共 8 条

[1] A 1-V CMOS power amplifier for Bluetooth applications [J].