Multi-stacking Indium Zinc Oxide Thin-Film Transistors Post-annealed by Femtosecond Laser

被引：8

作者：

Shan, Fei ^{[1
]}

Lee, Jae-Yun ^{[1
]}

Zhao, Han-Lin ^{[1
]}

Choi, Seong Gon ^{[1
]}

Koh, Jung-Hyuk ^{[2
]}

Kim, Sung-Jin ^{[1
]}

机构：

[1] Chungbuk Natl Univ, Coll Elect & Comp Engn, Cheongju 28644, South Korea

[2] Chung Ang Univ, Sch Elect & Elect Engn, 84 Heukseok Ro, Seoul 06974, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2021年 / 17卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Indium zinc oxide; Femtosecond laser; Solution-processed; Multi-stacked; Post-annealing process;

D O I：

10.1007/s13391-021-00296-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium zinc oxide thin-film transistors with a bottom gate structure were made by a channel layer multi-stack process on silicon substrate. Femtosecond laser post-annealing treatment was carried out to study the impact on the electrical properties and the stability of the device. The experimental results show that the electrical properties of the device are improved optimally when 100-s laser post-annealing treatment was carried out, and it had the best stability. The mobility was 5.23 cm(2)/Vs, the threshold voltage was - 0.26 V, the stable subthreshold swing was 0.81 V/dec, and the electron mobility of the device stayed above 3.82 cm(2)/Vs after it was exposed to air for 14 days.

引用

页码：451 / 458

页数：8

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