Enhancement of tunneling magneto resistance by inserting an amorphous nonmagnetic FeZr layer in magnetic tunnel junctions

被引：9
作者：
Jun, KI
Lee, JH
Shin, KH
Rhie, K [1 ]
Lee, BC
机构：
[1] Korea Univ, Dept Phys, Chochiwon 339700, South Korea
[2] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136791, South Korea
[3] Inha Univ, Dept Phys, Inchon, South Korea
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2005年 / 286卷
关键词：
amorphous; MTJ; TMR; FeZr;
D O I：
10.1016/j.jmmm.2004.09.022
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An amorphous metallic FeZr layer is inserted inside the bottom magnetic layer in exchange-biased CoFe/Al2O3/CoFe magnetic tunnel junctions (MTJs). At room temperature, the tunneling magnetoresistance (TMR) increases from 25% to 36% before annealing, and from 45% to 52% after annealing. The junction resistance also increases with the FeZr thickness. The higher quality of the MTJ is attributed to the improved Al-oxide barrier due to the amorphousness of the FeZr layer. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：158 / 161
页数：4
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