Intrinsic performance of carbon-nanotube transistors

被引：0

作者：

Nihey, F ^{[1
]}

Hongo, H ^{[1
]}

Ochiai, Y ^{[1
]}

Yudasaka, M ^{[1
]}

Iijima, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intrinsic transconductance of carbon-nanotube field-effect transistors (CNTFETs) was investigated with carbon nanotubes (CNTs) grown both by laser ablation and chemical vapor deposition (CVD). The measured transconductance at a drain voltage of -1 V was 8.7 mu S for a CVD-grown CNT with a diameter of 1.5 nm. Very high intrinsic transconductance of 20 mu S was calculated by considering the contribution of parasitic resistance. Apparent and intrinsic transconductance per unit channel width are considerably larger than those for the state-of-the-art Si-MOSFETs. We expect that the performance of CNTFETs will advance further by improving CNT quality and by optimising device structures.

引用

页码：619 / 623

页数：5

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