The Schottky energy barrier dependence of charge injection in organic light-emitting diodes

被引：106

作者：

Campbell, IH

Davids, PS

Smith, DL

Barashkov, NN

Ferraris, JP

机构：

[1] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Univ Texas, Richardson, TX 75083 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present device model calculations of the current-voltage (I-V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I-V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I-V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited. (C) 1998 American Institute of Physics.

引用

页码：1863 / 1865

页数：3

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