Relationship between Near-infrared Emission of Bi-doped Glass and Preparation Conditions

被引：3

作者：

Masai, Hirokazu ^{[1
]}

Suzuki, Takenobu ^{[2
]}

Ohishi, Yasutake ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, 1-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan

[2] Toyota Technol Inst, Future Ind Oriented Basic Sci & Mat, Tempaku Ku, 2-12-1 Hisakata, Nagoya, Aichi 4688511, Japan

来源：

SENSORS AND MATERIALS | 2018年 / 30卷 / 07期

关键词：

glass; emission; near infrared; bismuth; BROAD-BAND EMISSION; BISMUTH; OXIDE; LUMINESCENCE; CURVES;

D O I：

10.18494/SAM.2018.1924

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have examined the effects of Bi concentration, annealing in air, and addition of reducing agent on the near-infrared (NIR) emission of Bi-doped TiO2-ZnO-B2O3-Al2O3 (TZBA) glass. Since the decay constants of the NIR emission are independent of the Bi concentration and the preparation conditions, it is expected that a small part of Bi species can act as effective activators in the glass. Annealing affects the blue shift and broadening of the NIR emission. The change in the bandwidth upon Bi or AlN addition can be explained from the viewpoint of the viscosity of the glass melt, which seems to be one of the important factors for obtaining broadband-emitting materials.

引用

页码：1533 / 1538

页数：6

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