Fabrication and characterization of wustite-based epitaxial thin films: p-type wide-gap oxide semiconductors composed of abundant elements

被引：13

作者：

Seki, Munetoshi ^{[1
]}

Takahashi, Masanao ^{[1
]}

Adachi, Masaki ^{[1
]}

Yamahara, Hiroyasu ^{[1
]}

Tabata, Hitoshi ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Engn, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 11期

关键词：

PHOTOEMISSION SPECTRA; FEO; REDUCTION; PT(111); IRON;

D O I：

10.1063/1.4896316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of FeO (wustite)-based thin films using pulsed laser deposition. Epitaxial films of iron oxide with different crystal structures (corundum, spinel, and rock-salt-type) were separately fabricated by controlling the Si content in the Fe2O3-SiO2 mixture target. The rock-salt-type Fe0.92Si0.08O was found to form a solid solution with MgO, whose bandgap could be widely tuned (2.7-6.0 eV) by altering the MgO fraction. Moreover, Fe0.92Si0.08O-MgO films show p-type semiconducting behavior with high electrical conductivity (0.1-7.8 S/cm) at 300 K. These results indicate that Fe0.92Si0.08O-MgO films are good candidates for transparent p-type semiconductors. (c) 2014 AIP Publishing LLC.

引用

页数：4

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