Pulsed laser deposition of crystalline indium tin oxide films at room temperature by substrate laser irradiation

被引：22
作者：
Adurodija, FO
Izumi, H
Ishihara, T
Yoshioka, H
Motoyama, M
Murai, K
机构：
[1] HPIIR, Suma Ku, Kobe, Hyogo 6540037, Japan
[2] Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 4B期
关键词：
indium tin oxide; ITO; pulsed laser deposition; laser irradiation; structural properties; optoelectronic properties;
D O I：
10.1143/JJAP.39.L377
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Crystalline tin (Sn)-doped indium oxide (ITO) films grown at room temperature (RT) using pulsed laser deposition (PLD) coupled with laser irradiation of the growing films are discussed. The energy of the laser irradiation beam was similar to 0.07 J.cm(-2) The films were deposited from Sn-doped (0-10 wt%) In2O3 targets under oxygen pressure (Po-2) of 10(-2) Torr. At RT, the laser irradiated and nonirradiated portions of the films yielded resistivities of similar to 1.2 x 10(-4) and similar to 2.5 x 10(-1) Omega.cm, respectively. At 200 degrees C, a resistivity of 8.9 x 10(-5) Omega.cm was observed for the laser-irradiated part of the ITO films.
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页码：L377 / L379
页数：3
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