Thickness-dependent Crack Propagation in Uniaxially Strained Conducting Graphene Oxide Films on Flexible Substrates

被引:40
作者
Sakorikar, Tushar [1 ,2 ]
Kavitha, Maheswari Kavirajan [1 ]
Vayalamkuzhi, Pramitha [2 ]
Jaiswal, Manu [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
[2] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
关键词
FIELD-EFFECT TRANSISTORS; SOLAR-CELLS; THIN-FILMS; TRANSPARENT; REDUCTION; FRACTURE;
D O I
10.1038/s41598-017-02703-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We demonstrate that crack propagation in uniaxially strained reduced graphene oxide (rGO) films is substantially dependent on the film thickness, for films in the sub-micron regime. rGO film on flexible polydimethylsiloxane (PDMS) substrate develop quasi-periodic cracks upon application of strain. The crack density and crack width follow contrasting trends as film thickness is increased and the results are described in terms of a sequential cracking model. Further, these cracks also have a tendency to relax when the strain is released. These features are also reflected in the strain-dependent electrical dc and ac conductivity studies. For an optimal thickness (3-coat), the films behave as strain-resistant, while for all other values it becomes strain-responsive, attributed to a favorable combination of crack density and width. This study of the film thickness dependent response and the crack propagation mechanism under strain is a significant step for rationalizing the application of layered graphene-like systems for flexible optoelectronic and strain sensing applications. When the thickness is tuned for enhanced extent of crack propagation, strain-sensors with gauge factor up to similar to 470 are realized with the same material. When thickness is chosen to suppress the crack propagation, strain-resistive flexible TiO2-rGO UV photoconductor is realized.
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页数:10
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