Carbon nanotube field-effect transistor for GHZ operation

被引:0
作者
Bethoux, J. -M. [1 ]
Happy, H. [1 ]
Dambrine, G. [1 ]
Borghetti, J. [2 ]
Derycke, V. [2 ]
Goffman, M. [2 ]
Bourgoin, J. -P. [2 ]
机构
[1] CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol, BP 60069, F-59652 Villeneuve Dascq, France
[2] SPEC, Comm Energie Atom, Lab Elect Moleculaire, F-91191 Gif Sur Yvette, France
来源
ESSDERC 2006: PROCEEDINGS OF THE 36TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2006年
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F-T of 1 GHz, with a slope of -20dB/decade, for the first time.
引用
收藏
页码:206 / +
页数:3
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