Uniform and smooth AlN nanosheets were fabricated on Si substrates by a vapour-phase transport method, using At powder and ammonia as the source materials. Their morphology and structure were examined by scanning and transmission electron microscopy, and X-ray diffraction. They have a perfect rectangular shape. The growth is favoured along the < 1 (1) over bar 00 > and < 0001 > crystallographic directions within the (1120) plane. Their growth mechanism is discussed on the basis of data gathered. The linewidth of E-2 (high) longitudinal optical phonon mode is about 7 cm(-1) indicating their high quality. Their photoluminescence property is also investigated. (c) 2007 Elsevier Ltd. All rights reserved.