A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression

被引：0

作者：

Jin, Jian ^{[1
]}

Sun, Mengyuan ^{[1
]}

Yang, Yannan ^{[1
]}

Xu, Min ^{[1
]}

Zhang, David Wei ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2022年 / 19卷 / 10期

关键词：

GaN e-HEMT; high-speed switching; wide-bandgap power semiconductors; gate driver; POWER; TRANSISTORS;

D O I：

10.1587/elex.19.20220144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new circuit architecture to drive GaN e-HEMT power device was proposed in this work, which was taped out on TSMC 0.18 um BCD process and successfully tested. With the proposed driver circuit, gate voltage overshoot as well as ringing on GaN e-HEMT device has been successfully suppressed, while not sacrificing GaN e-HEMT advantage of high switching speed. The proposed GaN driver realized 1.1 ns rising time, 910 ps falling time, and minimum 1.8 ns output pulse width with almost no gate ringing and overshoot. This technology could potentially improve the system stability and reliability when driving GaN e-HEMT power devices.

引用

页数：4

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