Unusual dependence of resistance and voltage noise on current in La1-xSrxMnO3 ultrathin films

被引：21

作者：

Barone, C. ^{[1
]}

Adamo, C.

Galdi, A.

Orgiani, P.

Petrov, A. Yu.

Quaranta, O.

Maritato, L.

Pagano, S.

机构：

[1] Univ Salerno, CNR, INFM Coherentia, Baronissi, SA, Italy

[2] Univ Salerno, Dipartimento Fis ER Caianiello, Baronissi, SA, Italy

[3] Univ Salerno, Dipartimento Matemat & Informat, Baronissi, SA, Italy

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.75.174431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on measurements of current-resistance effects in La1-xSrxMnO3 ultrathin films deposited by molecular beam epitaxy. dc transport and voltage noise spectral density analyses have been performed in the temperature range of 10-300 K, and the results are compared with existing theoretical models. A possible connection between the explanation of the electrical transport properties and the two-level tunneling systems model, used for the voltage noise analysis, is proposed.

引用

页数：7

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