Formation of Si nanocrystals in thin SiO2 films for memory device applications

被引：7

作者：

Curiel, Mario ^{[1
]}

Petrov, Ivan ^{[2
]}

Nedev, Nicola ^{[1
]}

Nesheva, Diana ^{[3
]}

Sardela, Mauro ^{[2
]}

Murata, Yuya ^{[2
]}

Valdez, Benjamin ^{[1
]}

Manolov, Emil ^{[3
]}

Bineva, Irina ^{[3
]}

机构：

[1] Autonomous Univ Baja California, Inst Engn, Benito Juarez Blvd Esc Calle Normal S-N, Mexicali 21280, Baja California, Mexico

[2] Univ Illinois, Ctr Microanal Mat, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Bulgarian Acad Sci, Inst Solid State Phys, B-1784 Sofia, Bulgaria

来源：

ADVANCED ELECTRON MICROSCOPY AND NANOMATERIALS | 2010年 / 644卷

关键词：

SiOx; Si nanocrystals; TEM; AFM; SILICON;

D O I：

10.4028/www.scientific.net/MSF.644.101

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (similar to 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 degrees C causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

引用

页码：101 / +

页数：2

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