Trench SOI LDMOS with vertical field plate

被引：18
|
作者：
Wu, Lijuan [1 ]
Zhang, Wentong [3 ]
Shi, Qin [2 ]
Cai, Pengfei [2 ]
He, Hangcheng [2 ]
机构：
[1] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China
[2] Chengdu Univ Informat Technol, Coll Commun Engn, Chengdu 610225, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
ELECTRONICS LETTERS | 2014年 / 50卷 / 25期
基金：
中国国家自然科学基金;
关键词：
ON-RESISTANCE;
D O I：
10.1049/el.2014.3443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel vertical field plate (VFP) structure with low specific on-resistance (R-on,R-sp) is proposed. The VFP is inserted in the field oxide of the drift region with heavily doped N pillar parallel to the trench oxide layer (TOL), which depletes fully the drift region to decrease R-on,R-sp effectively and enhances the bulk field (ENBULF). The VFP optimises the bulk electric field to increase the breakdown voltage (BV). The BV of VFP is 668 V with an R-on,R-sp of 44.7 m Omega cm(2), which is much lower than the silicon limit.
引用
收藏
页码：1982 / 1983
页数：2
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