Development of Extreme Ultraviolet Photoresists

被引：7

作者：

Guo Xudong ^{[1
,3
]}

Yang Guoqiang ^{[1
,3
]}

Li Yi ^{[2
,3
]}

机构：

[1] Chinese Acad Sci, Key Lab Photochem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100039, Peoples R China

来源：

LASER & OPTOELECTRONICS PROGRESS | 2022年 / 59卷 / 09期

关键词：

material; extreme ultraviolet lithography; extreme ultraviolet photoresist; lithography; MOLECULAR GLASS RESISTS; CHEMICALLY AMPLIFIED RESIST; HIGH-RESOLUTION; NANOPARTICLE PHOTORESISTS; HIGH-SENSITIVITY; E-BEAM; 50; NM; EUV; PERFORMANCE; DERIVATIVES;

D O I：

10.3788/LOP202259.0922004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As Extreme Ultraviolet (EUV) lithography has become the most advanced lithography technology applied in the semiconductor manufacturing industry, corresponding EUV photoresists have also developed significantly in recent years. Herein, the development of polymeric, single-molecule-resin, and organic-inorganic hybrid EUV photoresists has been reviewed, considering the new problems and challenges faced by EUV lithography. It should benefit the researchers in the EUV lithography and photoresist.

引用

页数：28

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